In case you have already subscribed for the Article/Publication, please login, using the panel provided above.įor Information regarding subscription please click here.įor a comprehensive list of other publications available on indianjournals. The semiconductor-less switching resolves the long-standing. Si-nanowire, Quantum confinement, Electrostatic scale length, SNWT, MOSFET. The vertical device operation can be optimized with the capacitive coupling in the device geometry. LEplot, where LQ is the quantum confinement length, and LE denotes the electrostatic scale length. This approach is based on the use of LQvs. Hence, PEDOT-PSS-based OECTs are switched from ON to OFF upon the application of a gate voltage it is a p-type depletion mode transistor. First, ineffective gating ( ION / IOFF 10) appears in the DT regime at low VD, whereas effective gating ( ION / IOFF > 10 4) is activated at high VD. A better gate control, e.g., a better sub threshold swing and a higher ON-OFF current ratio is reported. When complexed with PSS, PEDOT is oxidized and highly conducting11and may be switched to its semiconducting state when reduced to its neutral state via the exchange of cations. In this paper, a general approach, that considers both electrostatic integrity and quantum confinement, so called the “EQ approach”, to compare the device performance of nanoscale Si FETs with various gate geometry configurations, i.e., planar MOSFETs versus SNWTs, is proposed. of Electronics, DDU Gorakhpur University, Gorakhpur, Utter Pradesh, India-273 009 E-mail: published on 7 June, 2018. graphene transistors, leading to a large Ion/Ioff ratio, within the ITRS roadmap specifications for future semiconductor technology nodes. Manish Mishra, Associate Professor, Dept. Bulletin of Pure & Applied Sciences- PhysicsĬomparative Study of Ion/Ioff Ratio of Silicon Nanowire Transistor (SNWT) with Planner MOSFETĭepartment of Electronics, DDU Gorakhpur University, Gorakhpur, Utter Pradesh, India-273 009
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